Fixing MoS 2 Device Flaws: A Liquid Solution

Making semiconductors often leaves tiny issues, like dangling bonds and charge traps, on channels and interfaces. Fixing these can be tough, especially with small structures and thin materials like MoS 2 . High-energy treatments might cause more harm than good. So, scientists turned to hydrogen ions in liquids to neutralize these defects. The H-TFSI solution helps reduce flaws in MoS 2 , but its exact effects weren't clear. Researchers tested both single-layer and multi-layer MoS 2

devices to see how the solution affects both the surface and the gate dielectric interface. They checked device performance with DC measurements and looked at low-frequency noise to get a better picture of interface traps. Applying H-TFSI to multi-layer MoS 2 improved carrier mobility more than twofold. Adding a negative gate voltage boosted this to over threefold, reaching a high of 128. 3 cm 2 /V s. Interface trap density went down, and the threshold voltage shifted positively. Hydrogen ions from H-TFSI showed they could heal surface and interface defects in MoS 2 devices very well. They did an excellent job of reducing interface traps and neutralizing material flaws.

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